FAIRCHILD SEMICONDUCTOR MCT4 free download

File name MCT4_Phototransistor.pdf

PHOTOTRANSISTOR OPTOCOUPLER MCT4 PACKAGE DIMENSIONS 0.230 (5.84) 0.209 (5.31) 0.195 (4.96) 0.178 (4.52) 0.210 (5.34) 0.170 (4.32) 0.560 (14.22) 0.500 (12.70) 0.100 (2.54) DIA. 3 0.048 (1.22) 0.028 (0.71) 0.046 (1.16) 0.036 (0.92) 45° 4 1 0.019 (0.48) Ш 4X 0.016 (0.41) CATHODE 3 SCHEMATIC 2 ANODE 1 2 COLLECTOR 4 EMITTER NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. DESCRIPTION The MCT4 is a standard four-lead, TO-18 package containing a GaAs infrared emitting diode optically coupled to an NPN silicon planar phototransistor. FEATURES · Hermetically package · High current transfer ratio; typically 35% · High isolation resistance; 1011 ohms at 500 volts · High voltage isolation emitter to detector 2001 Fairchild Semiconductor Corporation DS300241 8/13/01 1 OF 6 www.fairchildsemi.com PHOTOTRANSISTOR OPTOCOUPLER MCT4 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Flow) EMITTER Power Dissipation at 25°C Ambient Continuous Forward Current Reverse Voltage Forward Current - Peak (1 µs pulse, 300 pps) DETECTOR Power Dissipation 25°C Ambient Collector to Emitter Voltage Emitter to Collector Voltage COUPLER Total Power Dissipation Isolation Voltage (3) (2) (1) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-F PD IF VR IF(pk) PD VCEO VECO PD Rating -55 to +125 -65 to +150 260 for 10 sec 90 40 3 3.0 200 30 7 250 1000 Unit °C °C °C mW mA V A mW V V mW VDC ELECTRICAL / OPTICAL CHARACTERISTICS Parameters EMITTER Forward Voltage Reverse Current Capacitance DETECTOR Breakdown Voltage Collector to Emitter Emitter to Collector Leakage Current Collector to Emitter Capacitance Collector to Emitter NOTE: 1. Derate power linearly 1.2 mW/°C above 25°C 2. Derate power linearly 2.67 mW/°C above 25°C 3. Derate power linearly 3.3 mW/°C above 25°C VCE = 0 IF = 40 mA VR = 3.0 V V=0V (TA =25°C) INDIVIDUAL COMPONENT CHARACTERISTICS Test Conditions Symbol VF IR C Min Typ 1.30 0.15 150 Max 1.50 10 Units V µA pF IC = 1.0 mA, IF = 0 IE = 100 µA, IF = 0 VCE = 10 V, IF = 0 BVCEO BVECO ICEO CCE 30 7 12 5 2 50 V V nA pF www.fairchildsemi.com 2 OF 6 8/13/01 DS300241 PHOTOTRANSISTOR OPTOCOUPLER MCT4 TRANSFER CHARACTERISTICS DC Characteristics COUPLED DC current Transfer Ratio (note 1) Saturation Voltage AC Characteristics Capacitance LED to Detector Bandwidth (Fig. 5) Rise Time and Fall Time (see operating schematic) (TA = 25°C Unless otherwise specified.) Test Conditions VCE = 10 V, IF = 10 mA IC = 500 µA, IF = 10 mA IC = 2 mA, IF = 50 mA Test Conditions Note 2 IC = 2 mA, VCE = 10 V, Note 3 Symbol CTR VCE(SAT) Symbol Min Min 15 Typ 35 0.1 0.2 Typ 1.8 300 2 0.5 Max Max Units % V Units pF kHz µs ISOLATION CHARACTERISTICS Characteristic Isolation Resistance Breakdown Voltage Test Conditions V = 500 VDC Time = 1 sec Symbol RISO Min 1011 1000 Typ 1012 1500 Max Units ! VDC NOTE: 1. The current transfer